Publications

Detailed Information

Transparent organic bistable memory device with pure organic active material and Al/indium tin oxide electrode

DC Field Value Language
dc.contributor.authorYook, Kyoung Soo-
dc.contributor.authorLee, Jun Yeob-
dc.contributor.authorKim, Sung Hyun-
dc.contributor.authorJang, Jyongsik-
dc.date.accessioned2010-02-03T01:10:07Z-
dc.date.available2010-02-03T01:10:07Z-
dc.date.issued2008-06-03-
dc.identifier.citationAppl. Phys. Lett. 92, 223305en
dc.identifier.issn0003-6951-
dc.identifier.urihttps://hdl.handle.net/10371/48999-
dc.description.abstractTransparent organic bistable memory devices OBDs were developed by employing indium tin
oxide ITO as an anode and a cathode for OBD. A cathode structure of aluminum Al /ITO was
used and bistability could be realized with pure polyphenylenevilylene based polymer active
material without any metal nanoparticle. Transmittance of over 50% could be obtained in Al/ITO
based OBD at an Al thickness of 10 nm, and an average on/off ratio around 100 was observed.
en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.titleTransparent organic bistable memory device with pure organic active material and Al/indium tin oxide electrodeen
dc.typeArticleen
dc.contributor.AlternativeAuthor육경수-
dc.contributor.AlternativeAuthor이준엽-
dc.contributor.AlternativeAuthor김성현-
dc.contributor.AlternativeAuthor장정식-
dc.identifier.doi10.1063/1.2938878-
Appears in Collections:
Files in This Item:

Altmetrics

Item View & Download Count

  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Share