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Ferromagnetic properties of Zn1-xMgxO epitaxial films
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, S. W. | - |
dc.contributor.author | An, S.-J. | - |
dc.contributor.author | Yi, Gyu-Chul | - |
dc.contributor.author | Jung, C. U. | - |
dc.contributor.author | Lee, Sung-Ik | - |
dc.contributor.author | Cho, Sunglae | - |
dc.date.accessioned | 2009-06-23T09:12:19Z | - |
dc.date.available | 2009-06-23T09:12:19Z | - |
dc.date.issued | 2002-06-17 | - |
dc.identifier.citation | Appl. Phys. Lett. 80, 4561 (2002) | en |
dc.identifier.issn | 0003-6951 (print) | - |
dc.identifier.issn | 1077-3118 (online) | - |
dc.identifier.uri | https://hdl.handle.net/10371/4905 | - |
dc.identifier.uri | http://link.aip.org/link/?APPLAB/80/4561/1 | - |
dc.description.abstract | We report on ferromagnetic characteristics of Zn1-xMnxO (x=0.1 and 0.3) thin films grown on Al2O3(00.1) substrates using laser molecular-beam epitaxy. By increasing the Mn content, the films exhibited increases in both the c-axis lattice constant and fundamental band gap energy. The Curie temperature obtained from temperature-dependent magnetization curves was 45 K for the film with x=0.3, depending on the Mn composition in the films. The remanent magnetization and coercive field of Zn0.9Mn0.1O at 5 K were 0.9 emu/g and 300 Oe, respectively. For Zn0.7Mn0.3O, the remanent magnetization at 5 K increased to 3.4 emu/g. (C) 2002 American Institute of Physics. | en |
dc.language.iso | en | en |
dc.publisher | American Institute of Physics | en |
dc.subject | MAGNETIC SEMICONDUCTORS | en |
dc.subject | DOPED ZNO | en |
dc.title | Ferromagnetic properties of Zn1-xMgxO epitaxial films | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 이규철 | - |
dc.contributor.AlternativeAuthor | 이상익 | - |
dc.contributor.AlternativeAuthor | 조성래 | - |
dc.identifier.doi | 10.1063/1.1487927 | - |
dc.identifier.doi | 10.1063/1.1487927 | - |
dc.citation.journaltitle | Applied Physics Letters | - |
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