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Ferromagnetic properties of Zn1-xMgxO epitaxial films

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dc.contributor.authorJung, S. W.-
dc.contributor.authorAn, S.-J.-
dc.contributor.authorYi, Gyu-Chul-
dc.contributor.authorJung, C. U.-
dc.contributor.authorLee, Sung-Ik-
dc.contributor.authorCho, Sunglae-
dc.date.accessioned2009-06-23T09:12:19Z-
dc.date.available2009-06-23T09:12:19Z-
dc.date.issued2002-06-17-
dc.identifier.citationAppl. Phys. Lett. 80, 4561 (2002)en
dc.identifier.issn0003-6951 (print)-
dc.identifier.issn1077-3118 (online)-
dc.identifier.urihttps://hdl.handle.net/10371/4905-
dc.identifier.urihttp://link.aip.org/link/?APPLAB/80/4561/1-
dc.description.abstractWe report on ferromagnetic characteristics of Zn1-xMnxO (x=0.1 and 0.3) thin films grown on Al2O3(00.1) substrates using laser molecular-beam epitaxy. By increasing the Mn content, the films exhibited increases in both the c-axis lattice constant and fundamental band gap energy. The Curie temperature obtained from temperature-dependent magnetization curves was 45 K for the film with x=0.3, depending on the Mn composition in the films. The remanent magnetization and coercive field of Zn0.9Mn0.1O at 5 K were 0.9 emu/g and 300 Oe, respectively. For Zn0.7Mn0.3O, the remanent magnetization at 5 K increased to 3.4 emu/g. (C) 2002 American Institute of Physics.en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.subjectMAGNETIC SEMICONDUCTORSen
dc.subjectDOPED ZNOen
dc.titleFerromagnetic properties of Zn1-xMgxO epitaxial filmsen
dc.typeArticleen
dc.contributor.AlternativeAuthor이규철-
dc.contributor.AlternativeAuthor이상익-
dc.contributor.AlternativeAuthor조성래-
dc.identifier.doi10.1063/1.1487927-
dc.identifier.doi10.1063/1.1487927-
dc.citation.journaltitleApplied Physics Letters-
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