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초고속 Digital IC를 위한 HEMT Yield 개선에 관한 연구 : (A)Study on the improvement of HEMT Yield for high speed digital IC

DC Field Value Language
dc.contributor.advisor서광석-
dc.contributor.author이종원-
dc.date.accessioned2010-02-04T23:24:23Z-
dc.date.available2010-02-04T23:24:23Z-
dc.date.copyright2005.-
dc.date.issued2005-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000051412kog
dc.identifier.urihttps://hdl.handle.net/10371/50035-
dc.description학위논문(석사)--서울대학교 대학원 :전기.컴퓨터공학부,2005.ko
dc.format.extent60 장ko
dc.language.isokoko
dc.publisher서울대학교 대학원ko
dc.subjectGate Recessko
dc.subjectUltrasonic Bathko
dc.subjectYieldko
dc.subjectInGaAs HEMTko
dc.title초고속 Digital IC를 위한 HEMT Yield 개선에 관한 연구ko
dc.title.alternative(A)Study on the improvement of HEMT Yield for high speed digital ICko
dc.typeThesis-
dc.contributor.department전기.컴퓨터공학부-
dc.description.degreeMasterko
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