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In(Ga)AsInP 양자우물 구조의 성장과 계면구조 분석 : In(Ga)AsInP quantum well growth and analysis of the interfacial structure
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- Authors
- Advisor
- 윤의준
- Issue Date
- 1998
- Publisher
- 서울대학교 대학원
- Keywords
- MOCVD ; quantum well ; 유기금속 화학증착법 ; photoluminescene (PL) ; InGaAs ; high resolution x-ray diffraction (HTXRD) ; InP ; grazing incidence x-ray reflectivity (GIXR) ; 양자우물 구조 ; grazing incidence x-ray reflectivity (GIXR)
- Description
- 학위논문(박사)--서울대학교 대학원 :무기재료공학과,1998.
- Language
- Korean
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000076530
https://hdl.handle.net/10371/50776
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