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유기실리콘 화합물원료를 이용한 단결정 탄화규소 박막성장 및 특성 연구 : Growth and characterization of heteroepitaxial β-SiC thin films using organosilicon precursor

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dc.contributor.advisor김형준-
dc.contributor.author방욱-
dc.date.accessioned2010-02-05T06:40:03Z-
dc.date.available2010-02-05T06:40:03Z-
dc.date.copyright1997.-
dc.date.issued1997-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000079075kog
dc.identifier.urihttps://hdl.handle.net/10371/50788-
dc.description학위논문(박사)--서울대학교 대학원 :무기재료공학과,1997.ko
dc.format.extentxiv, 201 p.ko
dc.language.isokoko
dc.publisher서울대학교 대학원ko
dc.subjectSilicon carbide(SiC)ko
dc.subject탄화규소ko
dc.subjectthin filmko
dc.subject박막ko
dc.subjectsingle crystallineko
dc.subject단결정ko
dc.subjectbuffer layerko
dc.subject버퍼층ko
dc.subjectchemical vapor deposition(CVD)ko
dc.subject화학기상증착법ko
dc.title유기실리콘 화합물원료를 이용한 단결정 탄화규소 박막성장 및 특성 연구ko
dc.title.alternativeGrowth and characterization of heteroepitaxial β-SiC thin films using organosilicon precursorko
dc.typeThesis-
dc.contributor.department무기재료공학과-
dc.description.degreeDoctorko
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