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(A)Study on the ruggedness of the insulated gate bipolar transistor : 絶緣 게이트형 바이폴라 트랜지스터의 强靭性에 관한 硏究
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 한민구 | - |
| dc.contributor.author | 김수성 | - |
| dc.date.accessioned | 2010-02-08T04:48:10Z | - |
| dc.date.available | 2010-02-08T04:48:10Z | - |
| dc.date.copyright | 2005. | - |
| dc.date.issued | 2005 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000050137 | eng |
| dc.identifier.uri | https://hdl.handle.net/10371/51534 | - |
| dc.description | Thesis(doctoral)--서울대학교 대학원 :전기컴퓨터공학부,2005. | en |
| dc.format.extent | x, 138 leaves | en |
| dc.language.iso | en | en |
| dc.publisher | 서울대학교 대학원 | en |
| dc.subject | UIS | en |
| dc.subject | unclamped inductive switching | en |
| dc.subject | 단락 회로 특성 | en |
| dc.subject | short circuit capability | en |
| dc.subject | IGBT | en |
| dc.subject | IGBT | en |
| dc.subject | 강인성 | en |
| dc.subject | ruggedness | en |
| dc.subject | 순방향 전압 강하 | en |
| dc.subject | saturation voltage | en |
| dc.subject | CSL | en |
| dc.subject | carrier stored layer | en |
| dc.subject | 곡면 p-바디 접합 | en |
| dc.subject | curved p-body junction | en |
| dc.subject | 트렌치 | en |
| dc.subject | trench | en |
| dc.title | (A)Study on the ruggedness of the insulated gate bipolar transistor | en |
| dc.title.alternative | 絶緣 게이트형 바이폴라 트랜지스터의 强靭性에 관한 硏究 | en |
| dc.type | Thesis | - |
| dc.contributor.department | 전기컴퓨터공학부 | - |
| dc.description.degree | Doctor | en |
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