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열산화된 N₂O 산화막 및 산화막과 실리콘 계면의 전기적 특성

DC Field Value Language
dc.contributor.advisor김형준-
dc.contributor.author박지수-
dc.date.accessioned2010-02-08T07:44:07Z-
dc.date.available2010-02-08T07:44:07Z-
dc.date.copyright1996.-
dc.date.issued1996-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000080994kog
dc.identifier.urihttps://hdl.handle.net/10371/52073-
dc.description학위논문(석사)--서울대학교 대학원 :무기재료공학과,1996.ko
dc.format.extentvi, 48 장ko
dc.language.isokoko
dc.publisher서울대학교 대학원ko
dc.title열산화된 N₂O 산화막 및 산화막과 실리콘 계면의 전기적 특성ko
dc.typeThesis-
dc.contributor.department무기재료공학과-
dc.description.degreeMasterko
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