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Analytical thermal noise modeling of deep-submicron MOSFETs

DC Field Value Language
dc.contributor.advisor신형철-
dc.contributor.author김세영-
dc.date.accessioned2010-02-09T14:54:33Z-
dc.date.available2010-02-09T14:54:33Z-
dc.date.copyright2005.-
dc.date.issued2005-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000052892eng
dc.identifier.urihttps://hdl.handle.net/10371/53488-
dc.descriptionThesis(master`s)--서울대학교 대학원 :전기공학부,2005.en
dc.format.extentiii, 42 leavesen
dc.language.isoenen
dc.publisher서울대학교 대학원en
dc.subjectRF CMOSen
dc.subjectDrain thermal noiseen
dc.subject열잡음en
dc.subjectInduced gate noiseen
dc.subjectRF 회로 설계en
dc.subjectcorrelation coefficienten
dc.subject단채널 MOSFETen
dc.subjectRF MOSFETen
dc.subjectImpedance field methoden
dc.titleAnalytical thermal noise modeling of deep-submicron MOSFETsen
dc.typeThesis-
dc.contributor.department전기공학부-
dc.description.degreeMasteren
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Theses (Master's Degree_전기·정보공학부)
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