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Low-Temperature Epitaxial Growth of Cubic Silicon Carbide on Si(100) for Submicron-pattern Fabrications

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dc.contributor.authorAn, Sung-Jae-
dc.contributor.authorYi, Gyu-Chul-
dc.date.accessioned2009-07-12T23:40:47Z-
dc.date.available2009-07-12T23:40:47Z-
dc.date.issued2001-03-15-
dc.identifier.citationJpn. J. Appl. Phys. 40 (2001) 1379en
dc.identifier.issn0021-4922 (print)-
dc.identifier.issn1347-4065 (online)-
dc.identifier.urihttp://hdl.handle.net/10371/5352-
dc.description.abstractSiC films were selectively grown on patterned SiO2/Si(100) substrates using supersonic molecular jet epitaxy. For film growth, we employed methylsilane seeded in a carrier gas (He or H-2) as a reactant gas. Due to the high translational kinetic energy of methylsilane molecules in the supersonic jet, the growth temperature was as low as 670 degreesC. The reduction of the growth temperature is explained in terms of a decrease in the activation energy and enhancement of the reaction efficiency from methylsilane to the SiC film during film growth. More importantly, a high growth rate of SiC at low temperature yielded submicron patterns of SiC without degradation of the SiO2 mask.en
dc.description.sponsorshipThis research was sponsored by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology as one of the 21 century Frontier Programs, the Brain Korea 21 project, and the POSTECH BSRI Special Fund-2000.en
dc.language.isoen-
dc.publisherJapan Society of Applied Physicsen
dc.subjectcubic silicon carbide (SiC)en
dc.subjectsupersonic molecular jet epitaxyen
dc.subjectselective-area growthen
dc.subjectsubmicron patternsen
dc.subjectSi(100) substratesen
dc.titleLow-Temperature Epitaxial Growth of Cubic Silicon Carbide on Si(100) for Submicron-pattern Fabricationsen
dc.typeArticleen
dc.contributor.AlternativeAuthor안성재-
dc.contributor.AlternativeAuthor이규철-
dc.identifier.doi10.1143/JJAP.40.1379-
dc.identifier.doi10.1143/JJAP.40.1379-
dc.citation.journaltitleJapanese Journal of Applied Physics = JJAP-
Appears in Collections:
College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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