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Near ultraviolet light emitting diode composed of n-GaN/ZnO coaxial nanorod heterostructures on a p-GaN layer
Cited 53 time in
Web of Science
Cited 54 time in Scopus
- Authors
- Issue Date
- 2007-09-20
- Publisher
- American Institute of Physics
- Citation
- Appl. Phys. Lett. 91, 123109 (2007)
- Abstract
- The authors report on the fabrication and characteristics of near ultraviolet nanorod light emitting diodes (LEDs) composed of n-GaN/ZnO nanorod heterostructures on p-GaN substrates. The nanorod LEDs consist of the vertically aligned n-GaN/ZnO coaxial nanorod arrays grown on a p-GaN substrate. The LEDs demonstrated strong near ultraviolet emission at room temperature. The nanorod LEDs were turned on a forward-bias voltage of 5 V, and exhibited a large light emitting area. From electroluminescent spectra, dominant emission peaks were observed at 2.96 and 3.24 eV for an applied current of 2 mA. The origins of the strong and large area light emission are also discussed in terms of enhanced carrier injection from n-GaN nanostructures to p-GaN substrates.
- ISSN
- 0003-6951 (print)
1077-3118 (online)
- Language
- English
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