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Phase change behavior and electrical properties of SiO₂ doped Ge₂Sb₂Te? thin films for application in phase change random access memory
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 김형준 | - |
| dc.contributor.author | 류승욱 | - |
| dc.date.accessioned | 2010-05-04T04:46:01Z | - |
| dc.date.available | 2010-05-04T04:46:01Z | - |
| dc.date.copyright | 2010 | - |
| dc.date.issued | 2010 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000032467 | eng |
| dc.identifier.uri | https://hdl.handle.net/10371/63865 | - |
| dc.description | Thesis(doctors) --서울대학교 대학원 :재료공학부,2010.2. | en |
| dc.format.extent | xvii, 196 p. | en |
| dc.language.iso | en | en |
| dc.publisher | 서울대학교 대학원 | en |
| dc.subject | Ge₂Sb₂Te? | en |
| dc.subject | PRAM | en |
| dc.subject | Chalcogenide materials | en |
| dc.subject | Phase Change | en |
| dc.subject | PCRAM | en |
| dc.subject | Ge₂Sb₂Te? | en |
| dc.subject | Co-sputtering | en |
| dc.subject | SiO₂ | en |
| dc.subject | SiO₂ doped Ge₂Sb₂Te? | en |
| dc.subject | doping | en |
| dc.subject | Thermal conductivity | en |
| dc.subject | thermal conductivity | en |
| dc.subject | Thermal efficiency | en |
| dc.subject | thermal efficiency | en |
| dc.title | Phase change behavior and electrical properties of SiO₂ doped Ge₂Sb₂Te? thin films for application in phase change random access memory | en |
| dc.type | Thesis | - |
| dc.contributor.department | 재료공학부 | - |
| dc.description.degree | Doctor | en |
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