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A Novel Method for Cu Electrodeposition on Indium Tin Oxide Aided by Two-Step Sn-Pd activation

DC Field Value Language
dc.contributor.authorKim, Jae Jeong-
dc.contributor.authorKim, Soo-Kil-
dc.contributor.authorKim, Young Shik-
dc.date.accessioned2010-05-12T04:54:30Z-
dc.date.available2010-05-12T04:54:30Z-
dc.date.issued2003-09-15-
dc.identifier.citationJapanese Journal of Applied Physics 42 (2003) L1080–L1082en
dc.identifier.issn0021-4922-
dc.identifier.urihttps://hdl.handle.net/10371/65982-
dc.description.abstractSurface modification using the two-step wet activation method consisting of Sn sensitization and Pd activation was introduced
to Cu electrodeposition on indium tin oxide (ITO). Pd particles formed on the ITO surface through two-step Sn-Pd activation
mediated the electron transfer at the interface and resulted in high-density instantaneous nucleation. Unlike the sparse clustertype
deposits on bare ITO, Cu electrodeposition on Sn-Pd activated ITO enabled the deposition of bright, continuous, and
(111)-predominant Cu films on seedless ITO substrate.
en
dc.language.isoenen
dc.publisherJapan Society of Applied Physicsen
dc.subjectCuen
dc.subjectelectrodepositionen
dc.subjectITOen
dc.subjectPden
dc.subjectactivationen
dc.titleA Novel Method for Cu Electrodeposition on Indium Tin Oxide Aided by Two-Step Sn-Pd activationen
dc.typeArticleen
dc.contributor.AlternativeAuthor김재정-
dc.contributor.AlternativeAuthor김수길-
dc.contributor.AlternativeAuthor김용식-
dc.identifier.doi10.1143/JJAP.42.L1080-
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