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Bottom-up filling in Cu electroless deposition using bis-(3-sulfopropyl)-disulfide (SPS)

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Authors

Lee, Chang Hwa; Lee, Sang Chul; Kim, Jae Jeong

Issue Date
2005-05-30
Publisher
Elsevier
Citation
Electrochimica Acta 50 (2005) 3563–3568
Keywords
Cu electroless depositionSPSBottom-up fillingAdditiveQCM
Abstract
The effect of bis-(3-sulfopropyl)-disulfide (SPS) in Cu electroless deposition was investigated. Quartz crystal microbalance (QCM) was
used to measure the current density in a complete electroless bath, and the accelerating and suppressing effect of SPS were confirmed according
to its concentration. The highest acceleration effect appeared at 0.5 mg l−1 of SPS with 4.24mAcm−2 of current density while the current
density decreased to 0.485mAcm−2 at 5.0 mg l−1 of SPS. From differences in the effect of SPS according to the concentration, Cu bottom-up
filling was achieved using electroless deposition. The adsorbed sulfur compounds on the surface produced CuS, which acted as an impurity
to cause an increase of the film resistivity.
ISSN
0013-4686
Language
English
URI
https://hdl.handle.net/10371/65985
DOI
https://doi.org/10.1016/j.electacta.2005.01.009
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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