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Effect of Organic Additives on Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Planarization

Cited 8 time in Web of Science Cited 8 time in Scopus
Authors
Kang, Min Cheol; Kim, Jae Jeong; Moon, Doo-Kyung
Issue Date
2005-08-05
Publisher
Japan Society of Applied Physics
Citation
Japanese Journal of Applied Physics 44(2005) 5949–5952
Keywords
CMPceriaselectivityzeta potentialhydration
Abstract
An increase in the removal selectivity between silicon oxide and silicon nitride was attempted by adding organic additives to a
ceria slurry for the application of shallow trench isolation (STI) chemical mechanical planarization (CMP). The protection
behavior of poly(acrylic acid) (PAA) and the acceleration behavior of RE-610 in a ceria slurry were studied. PAA served as a
protector of the silicon nitride due to the change in zeta potential. RE-610 worked as a hydration accelerator of the silicon
oxide. When the two additives were added to the ceria slurry, the removal selectivity increased to 31 : 1. Moreover, PAA
improved the stability of the ceria slurry.
ISSN
0021-4922
Language
English
URI
https://hdl.handle.net/10371/65986
DOI
https://doi.org/10.1143/JJAP.44.5949
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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