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Pretreatment technique for surface improvement of Ru films in Ru-metalorganic chemical vapor deposition

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dc.contributor.authorHan, Hee-
dc.contributor.authorKim, Jae Jeong-
dc.contributor.authorYoon, Do Young-
dc.date.accessioned2010-05-12T05:24:05Z-
dc.date.available2010-05-12T05:24:05Z-
dc.date.issued2004-05-24-
dc.identifier.citationJournal of Vacuum Science and Technology a Vacuum Surfaces and Films 22(4), 1120-1123en
dc.identifier.issn0734-2101-
dc.identifier.urihttps://hdl.handle.net/10371/65989-
dc.description.abstractThe effects of Pd activation on ruthenium ~Ru! films grown by metalorganic chemical vapor
deposition ~MOCVD! using a bis~ethyl-p-cyclopentadienyl! ruthenium @Ru~EtCp!2# as a precursor
were investigated. Displacement-deposited Pd particles on TiN substrate play a role of active sites
for Ru nucleation. The growth rate was increased as the decomposition of Ru~EtCp!2 was promoted
by Pd activation prior to Ru deposition. Moreover, Pd particles dramatically enhanced Ru nucleation
at the early stage and the surface roughness of the films considerably reduced. From these results,
the possibility of Pd activation as a pretreatment technique for Ru nucleation in Ru–MOCVD is
proposed.
en
dc.language.isoenen
dc.publisherAmerican Vacuum Societyen
dc.subjectrutheniumen
dc.subjectsurface treatmenten
dc.subjectpalladiumen
dc.subjectmetallic thin filmsen
dc.subjectMOCVDen
dc.subjectnucleationen
dc.subjectsurface roughnessen
dc.subjectdissociationen
dc.titlePretreatment technique for surface improvement of Ru films in Ru-metalorganic chemical vapor depositionen
dc.typeArticleen
dc.contributor.AlternativeAuthor한희-
dc.contributor.AlternativeAuthor김재정-
dc.contributor.AlternativeAuthor윤두영-
dc.identifier.doi10.1116/1.1756876-
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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