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Bottom up Filling Using Electrical Oxidation on Pattern Wafer

Cited 2 time in Web of Science Cited 1 time in Scopus
Authors
Cha, Seung Hwan; Kim, Seung-Soo; Cho, Sung Ki; Kim, Jae Jeong
Issue Date
2005-09-16
Publisher
Electrochemical Society
Citation
Electrochemical and Solid-State Letters, 8 (11), C170-C172
Abstract
Cu electroplating has been researched to form the interconnect in integrated circuits. A suppressor and an accelerator are required
to accomplish superconformal deposition by electroplating on patterned wafers. Under these conditions, however, it is complicated
to control the process and the incorporation of additives in the Cu film increases its overall resistivity. Hence, it is necessary to
reduce the amount of additive in the electrolyte. In this paper, gap filling using electrochemical oxidation instead of an accelerator
was investigated. This approach resulted in the realization of genuine bottom-up filling.
ISSN
1099-0062
Language
English
URI
https://hdl.handle.net/10371/66125
DOI
https://doi.org/10.1149/1.2063248
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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