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Hf(O-iPr)4 전구체와 O2를 이용한 HfO2 박막의 원자층 증착

DC Field Value Language
dc.contributor.advisor문상흡-
dc.contributor.author김정찬-
dc.date.accessioned2010-05-14T08:02:54Z-
dc.date.available2010-05-14T08:02:54Z-
dc.date.copyright2004.-
dc.date.issued2004-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000055571kog
dc.identifier.urihttps://hdl.handle.net/10371/66376-
dc.description학위논문(석사)--서울대학교 대학원 :응용화학부,2004.ko
dc.format.extentvii, 60 장ko
dc.language.isokoko
dc.publisher서울대학교 대학원ko
dc.subject게이트 절연막ko
dc.subjectGate dielectricko
dc.subject원자층 증착ko
dc.subjectAtomic layer depositionko
dc.subjectHf(O-iPr)4ko
dc.subjectHf(o-ipr)4ko
dc.subjectHfO2ko
dc.subjectHfo2ko
dc.titleHf(O-iPr)4 전구체와 O2를 이용한 HfO2 박막의 원자층 증착ko
dc.typeThesis-
dc.contributor.department응용화학부-
dc.description.degreeMasterko
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