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Comparative Study of the Low-Frequency-Noise Behaviors in a-IGZO Thin-Film Transistors With Al2O3 and Al2O3/SiNx Gate Dielectrics
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, In-Tak | - |
dc.contributor.author | Cheong, Woo-Seok | - |
dc.contributor.author | Hwang, Chi-Sun | - |
dc.contributor.author | Lee, Jeong-Min | - |
dc.contributor.author | Kwon, Hyuck-In | - |
dc.contributor.author | Lee, Jong-Ho | - |
dc.date.accessioned | 2010-06-30 | - |
dc.date.available | 2010-06-30 | - |
dc.date.issued | 2009-08-08 | - |
dc.identifier.citation | IEEE Electron Device Letters, vol. 30, no. 8, pp. 828~830 | en |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://hdl.handle.net/10371/68017 | - |
dc.description.abstract | A comparative study is made of the low-frequency
noise (LFN) in amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with Al2O3 and Al2O3/SiNx gate dielectrics. The LFN is proportional to 1/fγ , with γ ∼ 1 for both devices, but the normalized noise for the Al2O3/SiNx device is two to three orders of magnitude lower than that for the Al2O3 device. The mobility fluctuation is the dominant LFN mechanism in both devices, but the noise from the source/drain contacts becomes comparable to the intrinsic channel noise as the gate overdrive voltage increases in Al2O3/SiNx devices. The SiNx interfacial layer is considered to be very effective in reducing LFN by suppressing the remote phonon scattering from the Al2O3 dielectric. Hooges parameter is extracted to ∼6.0 × 10−3 in Al2O3/SiNx devices. | en |
dc.description.sponsorship | Korean Ministry of Education, Science and Technology under Korea Science and Engineering Foundation Grant 2009-0063395 and in part by the IT R&D program of the Ministry of Knowledge Economy/Institute for Information Technology Advancement (2006-S079-02, Smart window with transparent electronic devices) | en |
dc.language.iso | en | en |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | en |
dc.subject | a-IGZO | en |
dc.subject | low-frequency noise | en |
dc.title | Comparative Study of the Low-Frequency-Noise Behaviors in a-IGZO Thin-Film Transistors With Al2O3 and Al2O3/SiNx Gate Dielectrics | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 조인탁 | - |
dc.contributor.AlternativeAuthor | 정우석 | - |
dc.contributor.AlternativeAuthor | 황지선 | - |
dc.contributor.AlternativeAuthor | 이정민 | - |
dc.contributor.AlternativeAuthor | 권혁인 | - |
dc.contributor.AlternativeAuthor | 이종호 | - |
dc.identifier.doi | 10.1109/LED.2009.2023543 | - |
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