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Copper Bottom-Up Filling by Electroplating Without any Additives on Patterned Wafer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cha, Seung Hwan | - |
dc.contributor.author | Kim, Seung-Soo | - |
dc.contributor.author | Cho, Sung Ki | - |
dc.contributor.author | Kim, Jae Jeong | - |
dc.date.accessioned | 2010-07-05T06:33:15Z | - |
dc.date.available | 2010-07-05T06:33:15Z | - |
dc.date.issued | 2006-12-13 | - |
dc.identifier.citation | Electrochemical and Solid state Letters, 10(2), D22-D24 | en |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | https://hdl.handle.net/10371/68299 | - |
dc.description.abstract | In conventional Cu electroplating, various additives are used to fill pattern without defects in patterned wafers. Pulse plating and
electrochemical oxidation were used to deposit Cu without any additives. Defects such as voids and seams were generated if only pulse plating was carried out. Electrochemical oxidation was performed to remove Cu metal containing defects and to remain Cu species only at the bottom part of the trenches. Then, defect free Cu films could be obtained when Cu electroplating without additives was performed on the etched substrate. | en |
dc.description.sponsorship | This work was supported by KOSEF through the Research Center
for Energy Conversion and Storage RCECS , also by the Institute of Chemical Processes ICP in Seoul National University. | en |
dc.language.iso | en | en |
dc.publisher | Electrochemical Society | en |
dc.title | Copper Bottom-Up Filling by Electroplating Without any Additives on Patterned Wafer | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 차승환 | - |
dc.contributor.AlternativeAuthor | 김승수 | - |
dc.contributor.AlternativeAuthor | 조성기 | - |
dc.contributor.AlternativeAuthor | 김재정 | - |
dc.identifier.doi | 10.1149/1.2400207 | - |
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