Publications

Detailed Information

Low-voltage bandgap reference with output-regulated current mirror in 90 nm CMOS

DC Field Value Language
dc.contributor.authorLee, Sang Hoon-
dc.contributor.authorLee, Hyunjoong-
dc.contributor.authorWoo, Jong-Kwan-
dc.contributor.authorKim, Suhwan-
dc.date.accessioned2010-11-08T22:22:28Z-
dc.date.available2010-11-08T22:22:28Z-
dc.date.issued2010-07-08-
dc.identifier.citationElectronics Letters- IEE, 46, (14), pp. 976-977en
dc.identifier.issn0013-5194-
dc.identifier.urihttps://hdl.handle.net/10371/70060-
dc.description.abstractA low-voltage bandgap reference (BGR) circuit is designed and fabricated
in a 90 nm CMOS technology. To mitigate error resulting from
the mismatch in temperature dependency of the current in the output
current mirror device and that of the BGR core, an output-regulated
current mirror is incorporated. Experimental results show that the
output voltage is 497.2 mV at 258C with a temperature coefficient of
28.3 ppm/8C between 2408C and 808C. The circuit occupies
0.0337 mm2 and dissipates 276.6 pW with a supply voltage of 1.2 V.
en
dc.description.sponsorshipThis work was supported in part by the grant from
the Industrial Source Technology Development Program (10033657,
10033812) of the Ministry of Knowledge Economy (MKE) of Korea.
en
dc.language.isoenen
dc.publisherInstitution of Engineering and Technologyen
dc.titleLow-voltage bandgap reference with output-regulated current mirror in 90 nm CMOSen
dc.typeArticleen
dc.contributor.AlternativeAuthor이상훈-
dc.contributor.AlternativeAuthor이현중-
dc.contributor.AlternativeAuthor우종관-
dc.contributor.AlternativeAuthor김수환-
dc.identifier.doi10.1049/el.2010.1546-
Appears in Collections:
Files in This Item:
There are no files associated with this item.

Altmetrics

Item View & Download Count

  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Share