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Low-voltage bandgap reference with output-regulated current mirror in 90 nm CMOS
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Sang Hoon | - |
dc.contributor.author | Lee, Hyunjoong | - |
dc.contributor.author | Woo, Jong-Kwan | - |
dc.contributor.author | Kim, Suhwan | - |
dc.date.accessioned | 2010-11-08T22:22:28Z | - |
dc.date.available | 2010-11-08T22:22:28Z | - |
dc.date.issued | 2010-07-08 | - |
dc.identifier.citation | Electronics Letters- IEE, 46, (14), pp. 976-977 | en |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.uri | https://hdl.handle.net/10371/70060 | - |
dc.description.abstract | A low-voltage bandgap reference (BGR) circuit is designed and fabricated
in a 90 nm CMOS technology. To mitigate error resulting from the mismatch in temperature dependency of the current in the output current mirror device and that of the BGR core, an output-regulated current mirror is incorporated. Experimental results show that the output voltage is 497.2 mV at 258C with a temperature coefficient of 28.3 ppm/8C between 2408C and 808C. The circuit occupies 0.0337 mm2 and dissipates 276.6 pW with a supply voltage of 1.2 V. | en |
dc.description.sponsorship | This work was supported in part by the grant from
the Industrial Source Technology Development Program (10033657, 10033812) of the Ministry of Knowledge Economy (MKE) of Korea. | en |
dc.language.iso | en | en |
dc.publisher | Institution of Engineering and Technology | en |
dc.title | Low-voltage bandgap reference with output-regulated current mirror in 90 nm CMOS | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 이상훈 | - |
dc.contributor.AlternativeAuthor | 이현중 | - |
dc.contributor.AlternativeAuthor | 우종관 | - |
dc.contributor.AlternativeAuthor | 김수환 | - |
dc.identifier.doi | 10.1049/el.2010.1546 | - |
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