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High-quality thin-film passivation by catalyzer-enhanced chemical vapor deposition for organic light-emitting diodes

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dc.contributor.authorKim, Han-Ki-
dc.contributor.authorKim, Myung Soo-
dc.contributor.authorKang, Jae-Wook-
dc.contributor.authorKim, Jang-Joo-
dc.contributor.authorYi, Min-Su-
dc.date.accessioned2009-08-12T06:28:11Z-
dc.date.available2009-08-12T06:28:11Z-
dc.date.issued2007-01-02-
dc.identifier.citationAppl. Phys. Lett. 90, 013502 (2007)en
dc.identifier.issn0003-6951 (print)-
dc.identifier.issn1077-3118 (online)-
dc.identifier.urihttps://hdl.handle.net/10371/7024-
dc.description.abstractThe thin-film passivation of organic light-emitting diodes (OLEDs) by a SiNx film grown by catalyzer-enhanced chemical vapor deposition was investigated. Using a tungsten catalyzer connected in series, a high-density SiNx passivation layer was deposited on OLEDs and bare polycarbonate (PC) substrates at a substrate temperature of 50 °C. Despite the low substrate temperature, the single SiNx passivation layer, grown on the PC substrate, exhibited a low water vapor transmission rate of (2–6)×10−2 g/m2/day and a high transmittance of 87%. In addition, current-voltage-luminescence results of an OLED passivated with a 150-nm-thick SiNx film compared to nonpassivated sample were identical indicating that the performance of an OLED is not critically affected by radiation from tungsten catalyzer during the SiNx deposition. Moreover, the lifetime to half initial luminance of an OLED passivated with the single 150-nm-thick SiNx layer was 2.5 times longer than that of a nonpassivated sample.en
dc.description.sponsorshipThis work was supported by Korea Research Foundation
Grant funded by Korea Government (MOEHRD: Basic Research
Promotion Fund)(KRF-2006-331-D00243) and Ministry of Commerce, Industry and Energy. Experiments at PLS were supported in part by MOST and POSTECH.
en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.titleHigh-quality thin-film passivation by catalyzer-enhanced chemical vapor deposition for organic light-emitting diodesen
dc.typeArticleen
dc.contributor.AlternativeAuthor김한기-
dc.contributor.AlternativeAuthor김명수-
dc.contributor.AlternativeAuthor강재욱-
dc.contributor.AlternativeAuthor김장주-
dc.contributor.AlternativeAuthor이민수-
dc.identifier.doi10.1063/1.2425021-
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Materials Science and Engineering (재료공학부)Journal Papers (저널논문_재료공학부)
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