Intermixing Characteristics of Strained InGaAs/InGaAsP Multiple Quantum Well Structure Using Impurity-Free Vacancy Diffusion

Abstract

The quantum well intermixing of a strained InGaAs/InGaAsP multiple quantum well using an impurity-free vacancy diffusion technique has been studied. The bandgap wavelength of quantum well was changed by the intermixing from 1.55 µm band to 1.3 µm band with a wavelength shift of 237 nm. The transformation from a multiple quantum well structure to a homogeneous alloy was observed. The strain-enhanced intermixing rate and self-interdiffusion rate were observed.