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Characteristics of Intermixed InGaAs/InGaAsP Multi-Quantum-Well Structure
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yeo, Deok Ho | - |
dc.contributor.author | Yoon, Kyung Hun | - |
dc.contributor.author | Kim, Sung June | - |
dc.date.accessioned | 2009-09-08T05:47:47Z | - |
dc.date.available | 2009-09-08T05:47:47Z | - |
dc.date.issued | 2000-03 | - |
dc.identifier.citation | Jpn. J. Appl. Phys. 39 (2000) 1032 | en |
dc.identifier.issn | 0021-4922 (print) | - |
dc.identifier.issn | 1347-4065 (online) | - |
dc.identifier.uri | https://hdl.handle.net/10371/8948 | - |
dc.description.abstract | The intermixing of a InGaAs/InGaAsP multi-quantum-well (MQW) structure induced by SiO2 dielectric cap layer deposition and heat treatment was investigated. Photoluminescence experiments reveal a large blue shift of the effective bandgap for the intermixed quantum well. By secondary ion mass spectroscopy, the group III and V elements of a MQW are found to interdiffuse at a similar rate after the intermixing process. An optical waveguide was fabricated using intermixed material where a propagation loss reduction of 450 dB was recorded at a wavelength close to the original bandgap wavelength. | en |
dc.language.iso | en | - |
dc.publisher | Japan Society of Applied Physics | en |
dc.subject | InGaAs/InGaAsP multi-quantum-well | en |
dc.subject | quantum well intermixing | en |
dc.subject | photoluminescence | en |
dc.subject | secondary ion mass spectroscopy | en |
dc.subject | optical waveguide | en |
dc.title | Characteristics of Intermixed InGaAs/InGaAsP Multi-Quantum-Well Structure | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 여덕호 | - |
dc.contributor.AlternativeAuthor | 윤경훈 | - |
dc.contributor.AlternativeAuthor | 김성준 | - |
dc.identifier.doi | 10.1143/JJAP.39.1032 | - |
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