S-Space College of Engineering/Engineering Practice School (공과대학/대학원) Dept. of Electrical and Computer Engineering (전기·정보공학부) Journal Papers (저널논문_전기·정보공학부)
Low Temperature Photoluminescence Characteristics of Zn-doped InP Grown by Metalorganic Chemical Vapor Deposition
Cited 31 time in Web of Science Cited 31 time in Scopus
- Issue Date
- American Institute of Physics
- J. Appl. Phys. 83, 2261 (1998)
- Zn-doped InP layers were obtained by two different doping techniques: in situ doping by low
pressure metalorganic chemical vapor deposition, and thermal diffusion from a Zn-containing film.
Their low temperature photoluminescence ~PL! characteristics were studied, and compared. In
Zn-diffused InP, the deep donor to acceptor transition was the most dominant transition and other
transitions such as the band edge transition and the band to band or shallow donor to acceptor
transition were not observed at the excitation power of 10 mW. On the other hand, well resolved
band edge peaks and the band or shallow donor to acceptor transition peak were observed for in situ
Zn doped InP, implying that less interstitial Zn atoms were generated during in situ doping.
Saturation of the hole concentration at 1.531018 cm3 was observed in in situ Zn doped InP, and the
changes in PL characteristics at the saturation level were extensively studied. Two new deep bands
at 0.88–1.0 eV and 1.21–1.27 eV were observed, and the intensity of the lower energy band
increased with diethylzinc flow rate. The lower energy band was observed even at room
temperature, and it is presumed to be related with the saturation of hole concentration.
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