Publications
Detailed Information
Low Temperature Photoluminescence Characteristics of Zn-doped InP Grown by Metalorganic Chemical Vapor Deposition
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Moon, Young Boo | - |
dc.contributor.author | Si, Sang Kee | - |
dc.contributor.author | Yoon, Eui Joon | - |
dc.contributor.author | Kim, Sung June | - |
dc.date.accessioned | 2009-09-08T06:41:46Z | - |
dc.date.available | 2009-09-08T06:41:46Z | - |
dc.date.issued | 1998-02 | - |
dc.identifier.citation | J. Appl. Phys. 83, 2261 (1998) | en |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://hdl.handle.net/10371/8971 | - |
dc.description.abstract | Zn-doped InP layers were obtained by two different doping techniques: in situ doping by low
pressure metalorganic chemical vapor deposition, and thermal diffusion from a Zn-containing film. Their low temperature photoluminescence ~PL! characteristics were studied, and compared. In Zn-diffused InP, the deep donor to acceptor transition was the most dominant transition and other transitions such as the band edge transition and the band to band or shallow donor to acceptor transition were not observed at the excitation power of 10 mW. On the other hand, well resolved band edge peaks and the band or shallow donor to acceptor transition peak were observed for in situ Zn doped InP, implying that less interstitial Zn atoms were generated during in situ doping. Saturation of the hole concentration at 1.531018 cm3 was observed in in situ Zn doped InP, and the changes in PL characteristics at the saturation level were extensively studied. Two new deep bands at 0.88–1.0 eV and 1.21–1.27 eV were observed, and the intensity of the lower energy band increased with diethylzinc flow rate. The lower energy band was observed even at room temperature, and it is presumed to be related with the saturation of hole concentration. | en |
dc.description.sponsorship | This work was supported by the Ministry of Education
through the Interuniversity Semiconductor Research Center ~ISRC 94-E-3142! and Korea Science and Engineering Foundation ~KOSEF 93-01-00-17!. One of the authors ~S.J.K.! would like to acknowledge the support by the Ministry of Education through the Interuniversity Semiconductor Research Center ~ISRC 97-E-3205!. | en |
dc.language.iso | en | - |
dc.publisher | American Institute of Physics | en |
dc.title | Low Temperature Photoluminescence Characteristics of Zn-doped InP Grown by Metalorganic Chemical Vapor Deposition | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 문영부 | - |
dc.contributor.AlternativeAuthor | 시상기 | - |
dc.contributor.AlternativeAuthor | 윤의준 | - |
dc.contributor.AlternativeAuthor | 김성준 | - |
dc.identifier.doi | 10.1063/1.366966 | - |
- Appears in Collections:
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.