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A Highly Linear X-Band GaN HEMT Transformer-Based Doherty Power Amplifier
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 권영우 | - |
dc.contributor.author | 이승엽 | - |
dc.date.accessioned | 2017-07-14T03:01:25Z | - |
dc.date.available | 2017-07-14T03:01:25Z | - |
dc.date.issued | 2015-08 | - |
dc.identifier.other | 000000053329 | - |
dc.identifier.uri | https://hdl.handle.net/10371/123181 | - |
dc.description | 학위논문 (석사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2015. 8. 권영우. | - |
dc.description.abstract | This thesis presents an X-band Transformer-based Doherty Power Amplifier(PA) with a phase linearizer. Doherty PA used Cree inc. 6 W GaN HEMT bare die and implemented on 7-layer PCB. The phase linearizer compensates a phase distortion of Doherty PA.
X-band Conventional Doherty PA is designed at 10 GHz for performance comparison with the X-band Transformer-based Doherty PA. The Conventional Doherty PA used Cree inc. 6 W GaN HEMT bare die and has been implemented using RT/Duroid 5880 10 mil thick substrate. The continuous wave (CW) measurement results show the peak output power of 40.3 dBm with a 40 V drain supply voltage at 10 GHz, the peak drain efficiency (DE) of 51% and the peak power added efficiency (PAE) of 40.3%. And the DE and PAE at 6 dB output power back-off are 41% and 33% respectively. X-band Transformer-based Doherty PA has been measured. The CW measurement results show the peak output power of 39.6 dBm with a 40 V supply at 9.56 GHz. The peak DE is 50.4% while the peak PAE is 38.5%. The DE and the PAE of the amplifier is still as high as 40% and 32.5% respectively at 6 dB output power back-off. | - |
dc.description.tableofcontents | Abstract·································································································· i
Contents·································································································· iii List of Figures··················································································· v List of Tables····················································································· vi Chapter 1. Introduction··································································· 1 Chapter 2. X-band Conventional Doherty PA ······················ 3 2.1 Design of conventional Doherty PA······························ 3 2.2 Measurement results of conventioanl Doherty PA· 4 Chapter 3. Transformer-based Doherty PA·························· 5 3.1 Load modulation with Combining Transformer······· 5 3.2 Design of Transformer and Balun································· 8 3.3 Circuit design·········································································· 9 3.4 Simulation results································································· 12 3.4.1 Efficiency of transformer and balun······················ 12 3.4.2 Simulation results of Transformer-based Doherty PA························································································ 13 3.5 Characterization of 7-layer PCB···································· 14 3.6 Measurement results···························································· 16 3.6.1 CW measurement results············································ 16 3.6.2 Modulation signal measurement results··············· 17 Chapter 4. Linearization of Transtormer-based Doherty Power Amplifier·················································································· 20 4.1 Theory of Linearization······················································ 20 4.2 Design of linearizer································································ 21 4.3 Measurement results of linearizer·································· 21 4.4 Measurement results of PA with linearizer··············· 25 Chapter 5. Conclusion····································································· 30 Reference······························································································ 31 초록····························································································· 32 | - |
dc.format | application/pdf | - |
dc.format.extent | 1245320 bytes | - |
dc.format.medium | application/pdf | - |
dc.language.iso | en | - |
dc.publisher | 서울대학교 대학원 | - |
dc.subject | Doherty PA | - |
dc.subject.ddc | 621 | - |
dc.title | A Highly Linear X-Band GaN HEMT Transformer-Based Doherty Power Amplifier | - |
dc.type | Thesis | - |
dc.contributor.AlternativeAuthor | Seung-yub Lee | - |
dc.description.degree | Master | - |
dc.citation.pages | 33 | - |
dc.contributor.affiliation | 공과대학 전기·컴퓨터공학부 | - |
dc.date.awarded | 2015-08 | - |
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