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Deposition behavior and dielectric properties of high dielectric constant oxide thin films : 고유전율 산화물 박막의 증착 거동 및 유전 특성
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 김형준 | - |
dc.contributor.author | 노상용 | - |
dc.date.accessioned | 2009-11-18 | - |
dc.date.available | 2009-11-18 | - |
dc.date.copyright | 2006. | - |
dc.date.issued | 2006 | - |
dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000046482 | eng |
dc.identifier.uri | https://hdl.handle.net/10371/12648 | - |
dc.description | Thesis(doctoral)--서울대학교 대학원 :재료공학부,2006. | eng |
dc.format.extent | xvi, 197 p. | eng |
dc.language.iso | en | eng |
dc.publisher | 서울대학교 대학원 | eng |
dc.subject | high-κ | eng |
dc.subject | high-κ | eng |
dc.subject | MOCVD | eng |
dc.subject | MOCVD | eng |
dc.subject | ALD | eng |
dc.subject | ALD | eng |
dc.subject | TiO2 | eng |
dc.subject | TiO2 | eng |
dc.subject | Al2O3 | eng |
dc.subject | Al2O3 | eng |
dc.subject | AlN | eng |
dc.subject | AlN | eng |
dc.subject | La2O3 | eng |
dc.subject | La2O3 | eng |
dc.subject | 증착거동 | eng |
dc.subject | deposition behavior | eng |
dc.subject | 누설전류 | eng |
dc.subject | leakage current mechanism | eng |
dc.subject | 밴드갭 | eng |
dc.subject | band gap | eng |
dc.subject | XPS | eng |
dc.subject | XPS | eng |
dc.subject | 계면트랩밀도 | eng |
dc.subject | interface trap density | eng |
dc.title | Deposition behavior and dielectric properties of high dielectric constant oxide thin films | eng |
dc.title.alternative | 고유전율 산화물 박막의 증착 거동 및 유전 특성 | eng |
dc.type | Thesis | - |
dc.contributor.department | 재료공학부 | - |
dc.description.degree | Doctor | eng |
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