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Epitaxial growth of thin GaNAs and InGaNAs layers by metalorganic chemical vapor deposition : 유기금속화학기상증착법을 이용한 GaNAs, InGaNAs의 단결정 박막성장
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 윤의준 | - |
dc.contributor.author | 나현석 | - |
dc.date.accessioned | 2009-11-18 | - |
dc.date.available | 2009-11-18 | - |
dc.date.copyright | 2004. | - |
dc.date.issued | 2004 | - |
dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000055813 | eng |
dc.identifier.uri | https://hdl.handle.net/10371/12672 | - |
dc.description | Thesis(doctoral)--서울대학교 대학원 :재료공학부,2004. | eng |
dc.format.extent | 150 p. | eng |
dc.language.iso | en | eng |
dc.publisher | 서울대학교 대학원 | eng |
dc.subject | GaN | eng |
dc.subject | GaN | eng |
dc.subject | GaNAs | eng |
dc.subject | GaNAs | eng |
dc.subject | InGaN | eng |
dc.subject | InGaN | eng |
dc.subject | InGaNAs | eng |
dc.subject | InGaNAs | eng |
dc.subject | 유기금속화학기상증착법 | eng |
dc.subject | MOCVD | eng |
dc.subject | As 인입 | eng |
dc.subject | As incorporation | eng |
dc.subject | TBA | eng |
dc.subject | TBA | eng |
dc.subject | 사파이어 | eng |
dc.subject | sapphire | eng |
dc.subject | AFM | eng |
dc.subject | AFM | eng |
dc.subject | TEM | eng |
dc.subject | TEM | eng |
dc.subject | SIMS | eng |
dc.subject | SIMS | eng |
dc.title | Epitaxial growth of thin GaNAs and InGaNAs layers by metalorganic chemical vapor deposition | eng |
dc.title.alternative | 유기금속화학기상증착법을 이용한 GaNAs, InGaNAs의 단결정 박막성장 | eng |
dc.type | Thesis | - |
dc.contributor.department | 재료공학부 | - |
dc.description.degree | Doctor | eng |
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