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Property improvement of the Ruthenium thin films deposited by metal-organic chemical vapor deposition for the electrodes of the DRAM devices : DRAM 소자의 전극 물질로의 적용을 위해 유기화학기상 증착법으로 증착한 Ru 박막의 특성 개선에 관한 연구

DC Field Value Language
dc.contributor.advisor김형준-
dc.contributor.author김범석-
dc.date.accessioned2009-11-18T06:19:01Z-
dc.date.available2009-11-18T06:19:01Z-
dc.date.copyright2008.-
dc.date.issued2008-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000039488eng
dc.identifier.urihttps://hdl.handle.net/10371/13208-
dc.descriptionThesis(doctors) --서울대학교 대학원 :재료공학부, 2008.2.eng
dc.format.extentxv, 156 p.eng
dc.language.isoen-
dc.publisher서울대학교 대학원eng
dc.subjectRueng
dc.subjectRueng
dc.subject유기금속화학기상증착eng
dc.subjectMOCVDeng
dc.subjectDRAMeng
dc.subjectDRAMeng
dc.subject핵생성eng
dc.subjectnucleationeng
dc.subject일함수eng
dc.subjectwork functioneng
dc.subjectagglomerationeng
dc.subjectagglomerationeng
dc.titleProperty improvement of the Ruthenium thin films deposited by metal-organic chemical vapor deposition for the electrodes of the DRAM deviceseng
dc.title.alternativeDRAM 소자의 전극 물질로의 적용을 위해 유기화학기상 증착법으로 증착한 Ru 박막의 특성 개선에 관한 연구eng
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeDoctoreng
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