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(A)Study on the reduction of the leakage current in MILC Poly-Si TFT : 금속유도측면결정화에 의한 다결정질 실리콘 박막 트랜지스터의 누설 전류 감소에관한 연구

DC Field Value Language
dc.contributor.advisor주승기-
dc.contributor.author한신희-
dc.date.accessioned2009-11-18T22:18:25Z-
dc.date.available2009-11-18T22:18:25Z-
dc.date.copyright2007.-
dc.date.issued2007-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000045090eng
dc.identifier.urihttps://hdl.handle.net/10371/13512-
dc.descriptionThesis(doctor`s)--서울대학교 대학원 :재료공학부,2007.eng
dc.format.extentxiv, 108 p.eng
dc.language.isoeneng
dc.publisher서울대학교 대학원eng
dc.subject금속유도측면결정화 (MILC)eng
dc.subjectmetal-induced lateral crystallization (MILC)eng
dc.subject다결정질 실리콘 (poly-Si)eng
dc.subjectpolycrystalline silicon (poly-Si)eng
dc.subject전기적 스트레스 (Electrical Stressing)eng
dc.subjectLeakage currenteng
dc.subject박막 트랜지스터 (TFT)eng
dc.subjectElectrical Stressingeng
dc.subject수소 열처리eng
dc.subjectthin film transistor (TFT)eng
dc.subjectgate-overlapped Lightly Doped Drain (GOLDD)eng
dc.subjectH2 annealingeng
dc.subjectGate-Overlapped Lightly Doped Drain (GOLDD)eng
dc.title(A)Study on the reduction of the leakage current in MILC Poly-Si TFTeng
dc.title.alternative금속유도측면결정화에 의한 다결정질 실리콘 박막 트랜지스터의 누설 전류 감소에관한 연구eng
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeDoctoreng
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