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Homoepitaxial growth and In-situ doping of monocrystalline 4H-SiC for power device applications
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 김형준 | - |
| dc.contributor.author | 송호근 | - |
| dc.date.accessioned | 2009-11-18T22:27:49Z | - |
| dc.date.available | 2009-11-18T22:27:49Z | - |
| dc.date.copyright | 2007. | - |
| dc.date.issued | 2007 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000042908 | eng |
| dc.identifier.uri | https://hdl.handle.net/10371/13534 | - |
| dc.description | 학위논문(박사)--서울대학교 대학원 :재료공학부,2007. | eng |
| dc.format.extent | xix, 236 p. | eng |
| dc.language.iso | en | eng |
| dc.publisher | 서울대학교 대학원 | eng |
| dc.subject | 4H-SiC | eng |
| dc.subject | 4H-SiC | eng |
| dc.subject | Homoepitaxial growth | eng |
| dc.subject | Homoepitaxial growth | eng |
| dc.subject | BTMSM | eng |
| dc.subject | BTMSM | eng |
| dc.subject | Semi-insulating | eng |
| dc.subject | Semi-insulating | eng |
| dc.subject | 철 | eng |
| dc.subject | Fe | eng |
| dc.subject | 바나듐 | eng |
| dc.subject | Vanadium | eng |
| dc.subject | Porous SiC 기판 | eng |
| dc.subject | Porous SiC substrate | eng |
| dc.subject | Schottky barrier diode | eng |
| dc.subject | Schottky barrier diode | eng |
| dc.title | Homoepitaxial growth and In-situ doping of monocrystalline 4H-SiC for power device applications | eng |
| dc.type | Thesis | - |
| dc.contributor.department | 재료공학부 | - |
| dc.description.degree | Doctor | eng |
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