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(A) study on the strain variation by boron doping in SiGe epitaxial growth : SiGe 단결정막 성장 시 붕소 도핑에 의한 응력 변화에 관한 연구
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- Authors
- Advisor
- 윤의준
- Issue Date
- 2008
- Publisher
- 서울대학교 대학원
- Keywords
- 초고진공화학기상증착법 ; SiGe ; 격자상수 ; boron doping ; boron 도핑 ; lattice contraction coefficient ; SiGe ; UHV-CVD ; Si ; HRXRD ; 격자수축계수 ; VASP ; HRXRD ; VASP ; 응력변화
- Description
- Thesis(doctors) --서울대학교 대학원 :재료공학부,2008.8.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000041514
https://hdl.handle.net/10371/13536
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