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Study on the initial stage of Ru growth by atomic layer deposition for nonvolatile memory application : 단원자층 증착법을 이용한 루세늄 초기 성장과정에 대한 연구
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 김기범 | - |
| dc.contributor.author | 임성수 | - |
| dc.date.accessioned | 2009-11-19T05:05:44Z | - |
| dc.date.available | 2009-11-19T05:05:44Z | - |
| dc.date.copyright | 2008. | - |
| dc.date.issued | 2008 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000041522 | eng |
| dc.identifier.uri | https://hdl.handle.net/10371/13637 | - |
| dc.description | Thesis(doctors) --서울대학교 대학원 :재료공학부,2008.8. | eng |
| dc.format.extent | xviii, 214 p. | eng |
| dc.language.iso | en | eng |
| dc.publisher | 서울대학교 대학원 | eng |
| dc.subject | 단원자층증착 | eng |
| dc.subject | atomic layer deposition | eng |
| dc.subject | 루세늄 | eng |
| dc.subject | Ru | eng |
| dc.subject | 핵생성 | eng |
| dc.subject | nucleation and growth | eng |
| dc.subject | 핵성장 | eng |
| dc.subject | nonvolatile memory | eng |
| dc.subject | 비휘발성 메모리 | eng |
| dc.subject | nanocrystal floating gate memory | eng |
| dc.subject | 나노결정 부유게이트 메모리 | eng |
| dc.subject | aluminum oxide | eng |
| dc.subject | 산화알루미늄 | eng |
| dc.subject | electron tunneling. | eng |
| dc.subject | 전자 터널링 | eng |
| dc.title | Study on the initial stage of Ru growth by atomic layer deposition for nonvolatile memory application | eng |
| dc.title.alternative | 단원자층 증착법을 이용한 루세늄 초기 성장과정에 대한 연구 | eng |
| dc.type | Thesis | - |
| dc.contributor.department | 재료공학부 | - |
| dc.description.degree | Doctor | eng |
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