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Preparation of Light-Emitting Devices with Poly(p-Phenylenevinylene): Effects of Thermal Elimination Conditions and Polymer Layer Thickness on Device Performance
Cited 19 time in
Web of Science
Cited 20 time in Scopus
- Authors
- Issue Date
- 1999-01-29
- Publisher
- Elsevier
- Citation
- Synth. Met. 99 (1999) 35
- Keywords
- Polymer ; Light emitting diode ; Poly(p-phenylene vinylene) ; Thermal elimination conditions ; External quantum efficiency ; Brightness ; Degree of conversion ; Precursor film ; Electroluminescence
- Abstract
- The optimum thermal elimination conditions for poly(p-phenylene vinylene) light-emitting diodes were sought. The precursor films should be heated to 230°C and kept at this temperature for 5 min under a N2 flow of 50 ml/min. By the heat treatment the degree of conversion to PPV was about 70%. A method determining the degree of conversion to PPV was proposed with IR measurement. About 8% of the THT resides in the fully converted PPV. A high external quantum efficiency of 0.0078% was achieved for the ITO/partially converted PPV/Al devices. The optimum thickness for the partially converted PPV layer as a electroluminescent was about 150 nm.
- ISSN
- 0379-6779
- Language
- English
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