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Temperature Dependence of Electro- and Photo-Luminescence of a Silyl-Disubstituted PPV Derivative

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Authors
Lee, Changhee; Park, Joon-Young; Park, Yung-Woo; Ahn, Young-Hwan; Kim, Dae-Sik; Hwang, Do-Hoon; Zyung, Tae-Hyung
Issue Date
1999
Publisher
한국물리학회 = The Korean Physical Society
Citation
Journal of the Korean Physical Society 1999;35:S291-S294
Abstract
We have studied the temperature dependences of the current-voltage (I - V ) characteristics,
the electroluminescence (EL), and the photoluminescence (PL) of light-emitting diodes fabricated
with poly(2,5-bis(dimethyloctylsilyl)-1,4-phenylenevinylene) (BDMOS-PPV). The ITO/BDMOSPPV/
Al devices show green light emission under both forward and reverse biases. The I - V
characteristics under both biases t the Fowler-Nordheim tunneling formula at high elds, and the
current and the EL intensity under a constant bias are independent of temperature below about
270 K, indicating that the tunneling of charge carriers is an important injection process. The EL
spectra under both biases are very similar to the PL spectra and are narrower compared than the
optical absorption spectrum. These results and a red-shift of the transient PL spectra with time
imply that excitons migrate towards longer conjugated segments prior to recombination.
ISSN
0374-4884 (Print)
1976-8524 (Online)
Language
English
URI
http://hdl.handle.net/10371/13753
DOI
https://doi.org/10.3938/jkps.35.291
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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