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Electronic-Structure of Insulating YBa2Cu3O6+x: From Mott-Hubbard Insulator to Fermi Glass via Oxygen Doping
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yu, G. | - |
dc.contributor.author | Lee, Changhee | - |
dc.contributor.author | Mihailovic, D. | - |
dc.contributor.author | Fincher, C. | - |
dc.contributor.author | Herron, N. | - |
dc.contributor.author | Mccarron, E. M. | - |
dc.contributor.author | Heeger, A. J. | - |
dc.date.accessioned | 2009-11-23T05:29:06Z | - |
dc.date.available | 2009-11-23T05:29:06Z | - |
dc.date.issued | 1993 | - |
dc.identifier.citation | J. Phys. Chem. Solids 54 (1993) 1161 | en |
dc.identifier.issn | 0022-3697 | - |
dc.identifier.uri | https://hdl.handle.net/10371/13769 | - |
dc.description.abstract | Photoconductivity, σph(ω), and optical conductivity, σ(ω), are compared for insulating YBa2Cu3O6+x (x<0.4) for ħω = 0.6−3.3 eV. With x≈0, there is an energy gap with weak spectral features at 1.5 eV and 2.1 eV, in addition to the well-known 1.75 eV and 2.6 eV bands. The σph(ω) and σ(ω) coincide at the band edge; no significant exciton binding energy is observed. The spectral gap is consistent with the electronic structure of a Mott-Hubbard insulator with a charge transfer (CT) gap between the 0 2p band and the Cu 3d upper Hubbard band. For x≈0.3, the broad sub-gap absorption induced by oxygen doping has no counterpart in σph(ω); σph(ω) turns on near 2 eV. In addition, thermally-activated behavior is observed for the 1.75 eV band in σph(ω). We conclude that upon doping, the states involved in transitions below 2 eV become localized. Random distribution of oxygen-ions at 0(1) sites introduces disorder and causes a change of electronic structure from a Mott-Hubbard insulator with a CT energy gap (at x = 0) to a Fermi glass (at x≈0.3). | en |
dc.language.iso | en | - |
dc.publisher | Elsevier | en |
dc.subject | insulating YBa2Cu3O6+x electronic structure | en |
dc.subject | photoconductivity | en |
dc.subject | Mott-Hubbard insulator | en |
dc.subject | Fermi glass | en |
dc.title | Electronic-Structure of Insulating YBa2Cu3O6+x: From Mott-Hubbard Insulator to Fermi Glass via Oxygen Doping | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 이창희 | - |
dc.identifier.doi | 10.1016/0022-3697(93)90160-S | - |
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