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Electroluminescence characteristics of n-type matrix materials doped with iridium-based green and red phosphorescent emitters
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Baek, Heume-Il | - |
dc.contributor.author | Lee, Changhee | - |
dc.date.accessioned | 2009-11-23T05:46:39Z | - |
dc.date.available | 2009-11-23T05:46:39Z | - |
dc.date.issued | 2008 | - |
dc.identifier.citation | J. Appl. Phys. 103, 054510 | en |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://hdl.handle.net/10371/13800 | - |
dc.description.abstract | The electroluminescence characteristics of various n-type matrix materials with various orders of
electron mobility doped with the phosphorescent green emitter fac-tris 2-phenylpyridine iridium III Ir ppy 3 and the phosphorescent red emitter bis 2- 2 -benzo 4,5-a thienyl pyridinato-N,C3 iridium acetyl-acetonate btp2Ir acac were evaluated and compared to those of the p-type 4,4 -N,N -dicarbazole-biphenyl CBP reference matrix. For Ir ppy 3, the device with the n-type matrix 1,3,5-tris N-phenylbenzimidazol-2-yl benzene was found to have the highest efficiency and operational lifetime, whereas for btp2Ir acac the device with the p-type matrix CBP was found to have the highest efficiency. Our study of hole- and electron-dominant devices and analyses of electroluminescence spectra show that the main recombination zone position and the electron-hole balance change as the matrix material changes, resulting in changes in the characteristics of the organic light emitting diodes. | en |
dc.language.iso | en | - |
dc.publisher | American Institute of Physics | en |
dc.title | Electroluminescence characteristics of n-type matrix materials doped with iridium-based green and red phosphorescent emitters | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 이창희 | - |
dc.identifier.doi | 10.1063/1.2890399 | - |
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