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Electroluminescence characteristics of n-type matrix materials doped with iridium-based green and red phosphorescent emitters

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dc.contributor.authorBaek, Heume-Il-
dc.contributor.authorLee, Changhee-
dc.date.accessioned2009-11-23T05:46:39Z-
dc.date.available2009-11-23T05:46:39Z-
dc.date.issued2008-
dc.identifier.citationJ. Appl. Phys. 103, 054510en
dc.identifier.issn0021-8979-
dc.identifier.urihttps://hdl.handle.net/10371/13800-
dc.description.abstractThe electroluminescence characteristics of various n-type matrix materials with various orders of
electron mobility doped with the phosphorescent green emitter fac-tris 2-phenylpyridine
iridium III Ir ppy 3 and the phosphorescent red emitter bis 2- 2 -benzo 4,5-a
thienyl pyridinato-N,C3 iridium acetyl-acetonate btp2Ir acac were evaluated and compared to
those of the p-type 4,4 -N,N -dicarbazole-biphenyl CBP reference matrix. For Ir ppy 3, the
device with the n-type matrix 1,3,5-tris N-phenylbenzimidazol-2-yl benzene was found to have the
highest efficiency and operational lifetime, whereas for btp2Ir acac the device with the p-type
matrix CBP was found to have the highest efficiency. Our study of hole- and electron-dominant
devices and analyses of electroluminescence spectra show that the main recombination zone
position and the electron-hole balance change as the matrix material changes, resulting in changes
in the characteristics of the organic light emitting diodes.
en
dc.language.isoen-
dc.publisherAmerican Institute of Physicsen
dc.titleElectroluminescence characteristics of n-type matrix materials doped with iridium-based green and red phosphorescent emittersen
dc.typeArticleen
dc.contributor.AlternativeAuthor이창희-
dc.identifier.doi10.1063/1.2890399-
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