Browse

All Solution processed N-type organic transistor using a spinning metal process

DC Field Value Language
dc.contributor.authorLee, Tae-Woo-
dc.contributor.authorByun, Younghun-
dc.contributor.authorKoo, Bon-Won-
dc.contributor.authorKang, In-Nam-
dc.contributor.authorLyu, Yi-Yeol-
dc.contributor.authorLee, Changhee-
dc.contributor.authorPu, Lyoungsun-
dc.contributor.authorLee, Sang Yun-
dc.date.accessioned2009-11-23T06:19:27Z-
dc.date.available2009-11-23T06:19:27Z-
dc.date.issued2005-
dc.identifier.citationAdv. Mater. 2005, 17, 2180en
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10371/13835-
dc.description.abstractAn all-solution-processed n-type transistor of soluble fullerene derivatives, based on a photosensitive organic silver precursor route to deposit source and drain metal electrodes, is reported (see Figure). The field-effect mobility of such devices is strongly dependent on the morphology of the spin-cast semiconducting thin film. The devices fabricated in this manner show a higher electron mobility than devices fabricated by vacuum-shadow deposition.en
dc.language.isoen-
dc.publisherWiley-Blackwellen
dc.subjectField-effect transistorsen
dc.subjectFullerenesen
dc.subjectThin filmsen
dc.titleAll Solution processed N-type organic transistor using a spinning metal processen
dc.typeArticleen
dc.contributor.AlternativeAuthor이태우-
dc.contributor.AlternativeAuthor변영훈-
dc.contributor.AlternativeAuthor구본원-
dc.contributor.AlternativeAuthor강인남-
dc.contributor.AlternativeAuthor류이열-
dc.contributor.AlternativeAuthor이창희-
dc.contributor.AlternativeAuthor이상윤-
dc.identifier.doi10.1002/adma.200401672-
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
Files in This Item:
There are no files associated with this item.
  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse