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Mobility of Electrons and Holes in an n-type Organic Semiconductor Perylene Diimide Thin Film

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Authors
Kim, Jung Yong; Chung, In Jae; Lee, Changhee; Kim, Young Chul; Kim, Jai Kyeong; Yu, Jae-Woong
Issue Date
2005
Publisher
Elsevier
Citation
Curr. Appl. Phys. 5 (2005) 615
Keywords
Perylene diimiMobilityTime of flightn-type semiconductor
Abstract
N,N′-diphenylbutyl-3,4,9,10-perylenebiscarboximide (PTCDI-C4Ph) were characterized by optical and electrochemical methods. A device with an ITO/PTCDI-C4Ph (≈2 μm)/Al structure was fabricated to measure mobility by time-of-flight techniques. This vacuum deposited organic layer was an amorphous state. Electrons were observed faster than holes. The electron and hole mobilities were 1.8 × 10−4 cm2/V s and 1.1 × 10−4 cm2/V s under the electric field of 500 (V/cm)1/2, respectively. This result shows that this organic compound is a good candidate for an n-type conduction.
ISSN
1567-1739
Language
English
URI
http://hdl.handle.net/10371/13844
DOI
https://doi.org/10.1016/j.cap.2004.08.007
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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