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탄화규소를 이용한 UV(Ultraviolet) 쇼트키 광다이오드 제작에 관한 연구 : Fabrication of 4H-SiC Schottky barrier photodiodes for Ultraviolet detector
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- Authors
- Advisor
- 김형준
- Issue Date
- 2005
- Publisher
- 서울대학교 대학원
- Keywords
- 4H-SiC ; Schottky barrier photodiode ; Leakage current ; Responsivity
- Description
- 학위논문(석사)--서울대학교 대학원 :재료공학부,2005.
- Language
- Korean
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000051078
https://hdl.handle.net/10371/14252
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