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ALD(Atomic Layer Deposition) 증착법을 이용한 Bi2(Ti2-xSix)O7-y 유전박막의 증착 거동 및 물성 평가에 관한 연구 : Growth mechanism and characteristics of Bi2(Ti2-xSix)O7-y deposited by atomic layer deposition

DC Field Value Language
dc.contributor.advisor황철성-
dc.contributor.author김완돈-
dc.date.accessioned2009-11-24T02:55:03Z-
dc.date.available2009-11-24T02:55:03Z-
dc.date.copyright2005.-
dc.date.issued2005-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000051038kor
dc.identifier.urihttps://hdl.handle.net/10371/14282-
dc.description학위논문(석사)--서울대학교 대학원 :재료공학부,2005.kor
dc.format.extentxiv, 174 p.kor
dc.language.isoko-
dc.publisher서울대학교 대학원kor
dc.subjectBi2(Ti2-xSix)O7-y (BTSO)kor
dc.subjectBi2(Ti2-xSix)O7-y (BTSO)kor
dc.subjectBi-Ti-O (BTO)kor
dc.subjectBi-Ti-O (BTO)kor
dc.subject커패시터kor
dc.subjectcapacitorkor
dc.subjectALDkor
dc.subjectALDkor
dc.subject고유전재료kor
dc.subjectdielectric constantkor
dc.subject유전율kor
dc.subjectleakage current densitykor
dc.subject전극kor
dc.subjectcomposition ratiokor
dc.subject조성비kor
dc.subject누설 전류 특성kor
dc.subjectDRAMkor
dc.titleALD(Atomic Layer Deposition) 증착법을 이용한 Bi2(Ti2-xSix)O7-y 유전박막의 증착 거동 및 물성 평가에 관한 연구kor
dc.title.alternativeGrowth mechanism and characteristics of Bi2(Ti2-xSix)O7-y deposited by atomic layer depositionkor
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeMasterkor
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