Publications

Detailed Information

Position-controlled growth of ZnO nanostructure array on large-area CVD-graphene for flexible piezoelectric pressure sensors : 대면적 그래핀 위에 성장한 위치 제어된 산화아연 나노구조 배열 및 이를 이용한 압전 압력센서 응용

DC Field Value Language
dc.contributor.advisor이규철-
dc.contributor.author박준범-
dc.date.accessioned2018-11-12T00:59:15Z-
dc.date.available2018-11-12T00:59:15Z-
dc.date.issued2018-08-
dc.identifier.other000000152853-
dc.identifier.urihttps://hdl.handle.net/10371/143230-
dc.description학위논문 (박사)-- 서울대학교 대학원 : 자연과학대학 물리·천문학부(물리학전공), 2018. 8. 이규철.-
dc.description.abstractSemiconductor nanostructures fabricated by bottom-up approach have been considered as ideal building blocks for electronic and optoelectronic device applications due to their own easy miniaturization of nanodevices and high crystallinity of the materials. Catalyst-free metal-organic vapor phase epitaxy (MOVPE) growth of ZnO nanostructures demonstrated their high purity and crystallinity with a few crystal defects, thus the method provides the desirable way for nano- and micrometer scale devices. In particular, individually position-controlled and vertically-aligned one-dimensional (1D) nanostructures are desirable for the practical manipulation of these nanodevices. While this can be achieved with a number of specific materials on single-crystalline substrates such as sapphire and silicon wafers, expanding this to more general material/substrate combinations remains challenging due to limitations in growth compatibility.

To overcome the narrow combination of material/substrate, recently, the growth of 1D nanostructures on two-dimensional (2D) semiconductor layers such as graphene and h-BN has been studied as a method to allow the preparation of vertically aligned 1D nanostructures on traditionally incompatible substrates. There, the 2D layers act as a growth buffer layer that can be easily attached to, and also mechanically/chemically detached from, arbitrary substrates. However, while position-controlled and vertically aligned growth has been performed on mechanically exfoliated 2D layers, this approach cannot allow scalability to a wafer area. This thesis presents the position-controlled selective growth of ZnO nanostructures on CVD-graphene films and demonstrated piezoelectric pressure sensor as a representative device application.

This thesis consists of 7 parts. Chapter 1 decribes general introduction and chapter 2 reviews previous research activities for growing 1D nanostructures on graphene and spatial controlling trials. In chapter 3, the experimental set-ups and procedures for growing nanomaterials and device fabrication using them are described. Chapter 4 describes two different growths of wide bandgap semiconductor nanostructures on graphene films and their characteristics. Chapter 5 propose a way to controlling spatial position and shape of individual ZnO nanostructures on CVD-graphene films. Using the nanostructures grown in a controlled manner, Chapter 6 describes a preparation method for flexible nanomaterials and demonstration of piezoelectric pressure sensors as a representative application. Finally, chapter 7 summarizes this thesis with a suggestion for future works.
-
dc.description.tableofcontentsChapter 1. Introduction 1

1.1 Motivation: Current research status in one-dimensional nanostructures and effort to use various substrates 1

1.2. Objective and approach 3

1.3. Thesis outline 5

Chapter 2. Literature review 7

2.1. One-dimensional semiconductor nanostructure growth on graphene 8

2.1.1. ZnO nanostructure growth on graphene 9

2.1.2. III-V compound semiconductor nanostructure growth on graphene 15

2.2. Position-controlled growth of one-dimensional semiconductor nanostructure growth on graphene films. 22

Chapter 3. Experimental methods 27

3.1. Material growth 27

3.1.1. Metal-organic vapor-phase epitaxy system 28

3.1.1.1. Gas delivery system 28

3.1.1.2. Growth chamber and substrate heating 31

3.1.1.3. Low pressure pumping and exhaust system 33

3.1.1.4. Gas and reactants 34

3.1.2. Growth techniques 35

3.1.2.1. Nanostructures on GaN thinfilms 36

3.1.2.2. Nanostructures on mechanical exfoliated graphene 41

3.1.2.3. Nanostructures on CVD-graphene films 43

3.2. Structural characterization 45

3.3. Optical characterization 46

3.4. Fabrication procedures for flexible piezoelectric sensors 46

Chapter 4. Growth of wide-bandgap semiconductor nanostructures on CVD-graphene films 50

4.1. Introduction 50

4.2. Catalyst-assisted growth of GaN nanowires 51

4.2.1. Growth method and general morphology 51

4.2.2. Effect of catalyst thickness to the morphology of GaN nanowires 55

4.2.3. Structural characteristics 57

4.2.4. Optical characteristics 59

4.3. Catalyst-free growth of ZnO nanostructures 61

4.3.1. Growth method 61

4.3.2. Effect of growth temperature to the morphology of ZnO nanostructures 62

4.3.3. Structural characteristics 65

4.3.4. Optical characteristics 67

4.4. Summary 69

Chapter 5. Position-controlled growth of ZnO nanostructure array on CVD-graphene 70

5.1. Introduction 70

5.2. Position-controlled growth of ZnO on graphene films using locally-confined oxygen-plasma treatment 71

5.2.1. Growth method and general morphology 71

5.2.2. Growth behavior of ZnO nanostructures on CVD-graphene and mechanically exfoliated graphene 75

5.3. Position-controlled growth of ZnO on CVD-graphene using an oxide growth mask 80

5.3.1. Growth method for position-controlled ZnO nanostructures 80

5.3.2. Growth behavior of ZnO nanotube arrays on CVD-graphene 84

5.3.3. Shape controlled ZnO nanostructures 86

5.3.4. Position- and diameter-controlled ZnO nanotube arrays 88

5.3.5. Material applications of ZnO nanotube arrays grown on graphene films 90

5.3.5.1. ZnO nanostructure array on different substrates 90

5.3.5.2. A wafer-scale growth of ZnO nanotube array 95

5.3.5.3. Mechanical lift-off the flexible nanosystems 97

5.4. Structural and optical characteristics of ZnO nanotubes 100

5.4.1. Structural characteristics 100

5.4.2. Optical characterizations 104

5.5. Summary 111

Chapter 6. Flexible piezoelectric pressure sensor using ZnO nanostructure array 113

6.1. Introduction 113

6.2. Piezoelectric pressure sensor using ZnO nanostructures 115

6.2.1. Experimental design and procedures 115

6.2.2 Electric properties of ZnO nanotube array grown on graphene films and proper device structure for pressure sensors 120

6.2.3. Pressure response 122

6.3. Summary 132

Chapter 7. Concluding remark and outlook 133

7.1. Summary 133

7.2. Future works and outlook 136

References 138

Appendix. Flexible photocatalyst applications using GaN nanowires grown on graphene films 147

Summary in Korean 158

Acknowledgements 160
-
dc.language.isoen-
dc.publisher서울대학교 대학원-
dc.subject.ddc530-
dc.titlePosition-controlled growth of ZnO nanostructure array on large-area CVD-graphene for flexible piezoelectric pressure sensors-
dc.title.alternative대면적 그래핀 위에 성장한 위치 제어된 산화아연 나노구조 배열 및 이를 이용한 압전 압력센서 응용-
dc.typeThesis-
dc.contributor.AlternativeAuthorJun Beom Park-
dc.description.degreeDoctor-
dc.contributor.affiliation자연과학대학 물리·천문학부(물리학전공)-
dc.date.awarded2018-08-
Appears in Collections:
Files in This Item:

Altmetrics

Item View & Download Count

  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Share