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상변화 메모리의 기억 재료인 붕소가 주입된 Ge2Sb5Te5[실제는 Ge2Sb2Te5]의 특성에 관한 연구 : (A)Study on the characteristics of the boron doped Ge2Sb2Te5 as memory element for phase change random access memory

DC Field Value Language
dc.contributor.advisor김기범-
dc.contributor.author권혁순-
dc.date.accessioned2009-11-24T03:26:54Z-
dc.date.available2009-11-24T03:26:54Z-
dc.date.copyright2005.-
dc.date.issued2005-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000051029kor
dc.identifier.urihttps://hdl.handle.net/10371/14349-
dc.description학위논문(석사)--서울대학교 대학원 :재료공학부,2005.kor
dc.format.extentviii, 81 장kor
dc.language.isoko-
dc.publisher서울대학교 대학원kor
dc.subjectPRAMkor
dc.subjectPRAMkor
dc.subjectreset 전류kor
dc.subjectreset currentkor
dc.subject붕소가 주입된 Ge2Sb2Te5kor
dc.subjectboron doped Ge2Sb2Te5kor
dc.subjectco sputteringkor
dc.subjectco sputteringkor
dc.subjectAESkor
dc.subjectAESkor
dc.subject비저항kor
dc.subjectresistivitykor
dc.subject결정화 온도(Tx)kor
dc.subjectcrystallization temperature (Tx)kor
dc.subject결정립 크기kor
dc.subjectgrain size.kor
dc.title상변화 메모리의 기억 재료인 붕소가 주입된 Ge2Sb5Te5[실제는 Ge2Sb2Te5]의 특성에 관한 연구kor
dc.title.alternative(A)Study on the characteristics of the boron doped Ge2Sb2Te5 as memory element for phase change random access memorykor
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeMasterkor
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