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Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and Memory
Cited 13 time in
Web of Science
Cited 13 time in Scopus
- Authors
- Issue Date
- 2018-08-23
- Publisher
- Springer Open
- Citation
- Nanoscale Research Letters, 13(1):252
- Keywords
- Resistive switching ; Selector ; Memory ; Nonlinearity ; Silicon oxide ; Vanadium
- Abstract
- This letter presents dual functions including selector and memory switching in a V/SiOx/AlOy/p++Si resistive memory device by simply controlling compliance current limit (CCL). Unidirectional threshold switching is observed after a positive forming with low CCL of 1μA. The shifts to the V-electrode side of the oxygen form the VOx layer, where the threshold switching can be explained by the metal-insulation-transition phenomenon. For higher CCL (30μA) applied to the device, a bipolar memory switching is obtained, which is attributed to formation and rupture of the conducting filament in SiOy layer. 1.5-nm-thick AlOy layer with high thermal conductivity plays an important role in lowering the off-current for memory and threshold switching. Through the temperature dependence, high-energy barrier (0.463eV) in the LRS is confirmed, which can cause nonlinearity in a low-resistance state. The smaller the CCL, the higher the nonlinearity, which provides a larger array size in the cross-point array. The coexistence of memory and threshold switching in accordance with the CCL provides the flexibility to control the device for its intended use.
- ISSN
- 1556-276X
- Language
- English
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