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HVPE법으로 성장시킨 GaN의 극성 분석

DC Field Value Language
dc.contributor.advisor정수진-
dc.contributor.author정회구-
dc.date.accessioned2009-11-24T03:47:09Z-
dc.date.available2009-11-24T03:47:09Z-
dc.date.copyright2004.-
dc.date.issued2004-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000053516kor
dc.identifier.urihttps://hdl.handle.net/10371/14389-
dc.description학위논문(석사)--서울대학교 대학원 :재료공학부,2004.kor
dc.format.extentix, 104 p.kor
dc.language.isoko-
dc.publisher서울대학교 대학원kor
dc.subjectGaNkor
dc.subjectGankor
dc.subjectHVPEkor
dc.subjectHvpekor
dc.subject극성kor
dc.subjectPolaritykor
dc.subjectTprekor
dc.titleHVPE법으로 성장시킨 GaN의 극성 분석kor
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeMasterkor
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