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Microscopic investigation of resistive switching in TiO₂thin film using conductive atomic force microscopy

DC Field Value Language
dc.contributor.advisor황철성-
dc.contributor.author신용철-
dc.date.accessioned2009-11-25T02:34:49Z-
dc.date.available2009-11-25T02:34:49Z-
dc.date.copyright2008.-
dc.date.issued2008-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000041115eng
dc.identifier.urihttps://hdl.handle.net/10371/14998-
dc.descriptionThesis(masters) --서울대학교 대학원 :재료공학부,2008.2.eng
dc.format.extentx, 101 p.eng
dc.language.isoen-
dc.publisher서울대학교 대학원eng
dc.subjectTiO₂eng
dc.subjectTiO₂eng
dc.subjectReRAMeng
dc.subjectReRAMeng
dc.subject저항변화메모리eng
dc.subjectresistive switchingeng
dc.subject필라멘트eng
dc.subjectCAFMeng
dc.subjectCAFMeng
dc.subjectfilamenteng
dc.titleMicroscopic investigation of resistive switching in TiO₂thin film using conductive atomic force microscopyeng
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeMastereng
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