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(The)Growth characteristics of (Ba,Sr)Tio3 thin films grown near 460℃ using a dome-type MOCVD reactor
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 황철성 | - |
| dc.contributor.author | 전충배 | - |
| dc.date.accessioned | 2009-11-25T02:36:11Z | - |
| dc.date.available | 2009-11-25T02:36:11Z | - |
| dc.date.copyright | 2006. | - |
| dc.date.issued | 2006 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000047486 | eng |
| dc.identifier.uri | https://hdl.handle.net/10371/15000 | - |
| dc.description | Thesis(master`s)--서울대학교 대학원 :재료공학부,2006. | eng |
| dc.format.extent | xi, 104 leaves | eng |
| dc.language.iso | en | - |
| dc.publisher | 서울대학교 대학원 | eng |
| dc.subject | BST | eng |
| dc.subject | BST | eng |
| dc.subject | MOCVD | eng |
| dc.subject | MOCVD | eng |
| dc.subject | 유전율(Deielctric constant) | eng |
| dc.subject | Capacitance | eng |
| dc.subject | Dielectric constant | eng |
| dc.title | (The)Growth characteristics of (Ba,Sr)Tio3 thin films grown near 460℃ using a dome-type MOCVD reactor | eng |
| dc.type | Thesis | - |
| dc.contributor.department | 재료공학부 | - |
| dc.description.degree | Master | eng |
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