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Silicon nanowire growth on Si(111) by UHV-CVD : 초고진공 화학기상증착법을 이용한 (111) 기판 위 실리콘나노선 성장

DC Field Value Language
dc.contributor.advisor윤의준-
dc.contributor.author정혜경-
dc.date.accessioned2009-11-25T03:21:01Z-
dc.date.available2009-11-25T03:21:01Z-
dc.date.copyright2007.-
dc.date.issued2007-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000043724eng
dc.identifier.urihttps://hdl.handle.net/10371/15100-
dc.description학위논문(석사) --서울대학교 대학원 :재료공학부,2007.eng
dc.format.extentvii, 56 장eng
dc.language.isoeneng
dc.publisher서울대학교 대학원eng
dc.subject실리콘eng
dc.subjectSilicon (Si)eng
dc.subject나노구조eng
dc.subjectnano structureeng
dc.subject나노선eng
dc.subjectnanowireeng
dc.subject급속열처리eng
dc.subjectrapid thermal annealing (RTA)eng
dc.subject초고진공 화학기상증착법eng
dc.subjectultra-high vacuum chemical vapor deposition (UHV-CVD)eng
dc.subject타이타늄eng
dc.subjecttitanium (Ti)eng
dc.subject금속촉매eng
dc.subjectmetal catalysteng
dc.subject기상-액상-고상 기구eng
dc.subjectvapor-liquild-solid (VLS) mechanismeng
dc.subject타이타늄-실리콘-산소 삼원상태도eng
dc.subjectTi-Si-O thenary phase diagrameng
dc.titleSilicon nanowire growth on Si(111) by UHV-CVDeng
dc.title.alternative초고진공 화학기상증착법을 이용한 (111) 기판 위 실리콘나노선 성장eng
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeMastereng
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