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Photoluminescence Enhancement in CdS Quantum Dots by Nanostructural Relaxation

DC Field Value Language
dc.contributor.advisor박병우-
dc.contributor.author이준희-
dc.date.accessioned2019-06-25T16:24:11Z-
dc.date.available2019-06-25T16:24:11Z-
dc.date.issued2012-02-
dc.identifier.other000000001673-
dc.identifier.urihttps://hdl.handle.net/10371/155436-
dc.identifier.urihttp://dcollection.snu.ac.kr/jsp/common/DcLoOrgPer.jsp?sItemId=000000001673-
dc.description학위논문 (석사)-- 서울대학교 대학원 : 재료공학부, 2012. 2. 박병우.-
dc.description.abstractPhotoluminescence enhancement and behavior of the initial action of CdS quantum dots in growth stage were observed via the post annealing process. After the process, the quantum dots with high optical quality were formed. The processes on CdS quantum dots reduced accumulated strains and acted reduce non-radiative recombination. Compared to the as-synthesis CdS quantum dots (quantum efficiency 1%), the heat treated sample showed enhanced luminescence properties (quantum efficiency 29%). Consequently, post annealing process on CdS quantum dots could lead to quantum efficiency enhancement and size change could be feasible and predictable quantitatively in the same experimental environment.-
dc.format.extent65-
dc.language.isoeng-
dc.publisher서울대학교 대학원-
dc.subject.ddc620.1-
dc.titlePhotoluminescence Enhancement in CdS Quantum Dots by Nanostructural Relaxation-
dc.typeThesis-
dc.typeDissertation-
dc.description.degreeMaster-
dc.contributor.affiliation재료공학부-
dc.date.awarded2012-02-
dc.identifier.holdings000000000006▲000000000011▲000000001673▲-
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