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Design and fabrication of vertical GaN power diodes : 수직형 질화갈륨 전력용 다이오드의 설계 및 제작

DC Field Value Language
dc.contributor.advisor한민구-
dc.contributor.author임지용-
dc.date.accessioned2019-07-10T04:21:25Z-
dc.date.available2019-07-10T04:21:25Z-
dc.date.issued2011-02-
dc.identifier.other000000029056-
dc.identifier.urihttps://hdl.handle.net/10371/159072-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000029056ko_KR
dc.description학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2011.2. 한민구.-
dc.format.extentxii, 143장-
dc.language.isoeng-
dc.publisher서울대학교 대학원-
dc.subjectGaN-
dc.subjectSchottky barrier diode (SBD)-
dc.subjectPiN diode-
dc.subjectLeakage current-
dc.subjectBreakdown voltage-
dc.subjectp-type implantation-
dc.subjectElectric field concentration-
dc.subjectAnnealing-
dc.subjectfield plate-
dc.subjectfloating metal ring-
dc.subjectp-type guard ring-
dc.titleDesign and fabrication of vertical GaN power diodes-
dc.title.alternative수직형 질화갈륨 전력용 다이오드의 설계 및 제작-
dc.typeThesis-
dc.typeDissertation-
dc.description.degreeDoctor-
dc.contributor.affiliation전기·컴퓨터공학부-
dc.date.awarded2011-02-
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